Invention Grant
US08236604B2 Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
有权
通过光学涂层的部分剥离对光伏器件进行细线金属化
- Patent Title: Fine line metallization of photovoltaic devices by partial lift-off of optical coatings
- Patent Title (中): 通过光学涂层的部分剥离对光伏器件进行细线金属化
-
Application No.: US13027576Application Date: 2011-02-15
-
Publication No.: US08236604B2Publication Date: 2012-08-07
- Inventor: Oliver Schultz-Wittmann , Douglas Crafts , Denis DeCeuster , Adrian Turner
- Applicant: Oliver Schultz-Wittmann , Douglas Crafts , Denis DeCeuster , Adrian Turner
- Applicant Address: US CA Milpitas
- Assignee: TetraSun, Inc.
- Current Assignee: TetraSun, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Jeffrey Klembczyk, Esq.; Kevin P. Radigan, Esq.
- Main IPC: H01L21/28
- IPC: H01L21/28

Abstract:
A metal grid contact and dielectric pattern on a layer requiring conductive contact in a photovoltaic device. The invention includes, in one aspect, forming a metal film; forming an etch resist over the metal film by, e.g., directly writing and in-situ curing the etch resist using, e.g., ink-jetting or screen-printing; etching the metal film leaving the resist pattern and a metal grid contact pattern under the etch resist intact; forming a dielectric layer over the etch resist; and removing the resist pattern and the dielectric over the etch resist, leaving a substantially co-planar metal grid contact and dielectric pattern. The metal grid contact pattern may form the front and/or back contact electrode of a solar cell; and the dielectric layer may be an optical reflection or antireflection layer. The layer requiring contact may be multifunctional providing its own passivation, such that passivation is substantially not required in the dielectric layer.
Public/Granted literature
- US20110132443A1 FINE LINE METALLIZATION OF PHOTOVOLTAIC DEVICES BY PARTIAL LIFT-OFF OF OPTICAL COATINGS Public/Granted day:2011-06-09
Information query
IPC分类: