Invention Grant
US08236584B1 Method of forming a light emitting diode emitter substrate with highly reflective metal bonding
有权
形成具有高反射金属接合的发光二极管发射极基板的方法
- Patent Title: Method of forming a light emitting diode emitter substrate with highly reflective metal bonding
- Patent Title (中): 形成具有高反射金属接合的发光二极管发射极基板的方法
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Application No.: US13025975Application Date: 2011-02-11
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Publication No.: US08236584B1Publication Date: 2012-08-07
- Inventor: Chyi Shyuan Chem , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
- Applicant: Chyi Shyuan Chem , Wen-Chien Fu , Hsing-Kuo Hsia , Chih-Kuang Yu , Ching-Hua Chiu , Hung-Yi Kuo
- Applicant Address: TW Hsin-Chu
- Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00

Abstract:
The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
Public/Granted literature
- US20120205694A1 METHOD OF FORMING A LIGHT EMITTING DIODE EMITTER SUBSTRATE WITH HIGHLY REFLECTIVE METAL BONDING Public/Granted day:2012-08-16
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