Invention Grant
US08236584B1 Method of forming a light emitting diode emitter substrate with highly reflective metal bonding 有权
形成具有高反射金属接合的发光二极管发射极基板的方法

Method of forming a light emitting diode emitter substrate with highly reflective metal bonding
Abstract:
The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
Information query
Patent Agency Ranking
0/0