Invention Grant
- Patent Title: Method of separating light-emitting diode from a growth substrate
- Patent Title (中): 从生长衬底分离发光二极管的方法
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Application No.: US12554578Application Date: 2009-09-04
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Publication No.: US08236583B2Publication Date: 2012-08-07
- Inventor: Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
- Applicant: Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
- Applicant Address: TW Hsin-Chu
- Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee: TSMC Solid State Lighting Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
Public/Granted literature
- US20100062551A1 Method of Separating Light-Emitting Diode from a Growth Substrate Public/Granted day:2010-03-11
Information query
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