Invention Grant
- Patent Title: Photoresist removal
- Patent Title (中): 光刻胶去除
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Application No.: US10389214Application Date: 2003-03-14
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Publication No.: US08236485B2Publication Date: 2012-08-07
- Inventor: David W. Minsek , Melissa K. Murphy , David Daniel Bernhard , Thomas H. Baum
- Applicant: David W. Minsek , Melissa K. Murphy , David Daniel Bernhard , Thomas H. Baum
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Moore & Van Allen, PLLC
- Agent Tristan A. Fuierer; Rosa Yaghmour
- Main IPC: G03F7/42
- IPC: G03F7/42 ; B08B3/04
Abstract:
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
Public/Granted literature
- US20040180300A1 Photoresist removal Public/Granted day:2004-09-16
Information query
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