Invention Grant
US08236476B2 Multiple exposure photolithography methods and photoresist compositions
有权
多重曝光光刻方法和光致抗蚀剂组合物
- Patent Title: Multiple exposure photolithography methods and photoresist compositions
- Patent Title (中): 多重曝光光刻方法和光致抗蚀剂组合物
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Application No.: US11970761Application Date: 2008-01-08
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Publication No.: US08236476B2Publication Date: 2012-08-07
- Inventor: Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
- Applicant: Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Katherine Brown
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/028

Abstract:
A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
Public/Granted literature
- US20090176174A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSTIONS Public/Granted day:2009-07-09
Information query
IPC分类: