Invention Grant
US08236475B2 Methods for removing a photoresist from a metal-comprising material
失效
从含金属材料中去除光致抗蚀剂的方法
- Patent Title: Methods for removing a photoresist from a metal-comprising material
- Patent Title (中): 从含金属材料中去除光致抗蚀剂的方法
-
Application No.: US12123049Application Date: 2008-05-19
-
Publication No.: US08236475B2Publication Date: 2012-08-07
- Inventor: Balgovind Sharma , Ying H. Tsang
- Applicant: Balgovind Sharma , Ying H. Tsang
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: G03C11/12
- IPC: G03C11/12
Abstract:
Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.
Public/Granted literature
- US20090286385A1 METHODS FOR REMOVING A PHOTORESIST FROM A METAL-COMPRISING MATERIAL Public/Granted day:2009-11-19
Information query
