Invention Grant
US08236380B2 Gas supply system, substrate processing apparatus and gas supply method
有权
气体供应系统,基板处理装置和供气方式
- Patent Title: Gas supply system, substrate processing apparatus and gas supply method
- Patent Title (中): 气体供应系统,基板处理装置和供气方式
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Application No.: US12371212Application Date: 2009-02-13
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Publication No.: US08236380B2Publication Date: 2012-08-07
- Inventor: Kenetsu Mizusawa
- Applicant: Kenetsu Mizusawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-021879 20060131
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/52 ; C23C14/54 ; C23F1/00

Abstract:
A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second processing gas branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; a first and a second additional gas branch line; a flow path switching unit; and a control unit. Before processing the substrate to be processed, the control unit performs a pressure ratio control on the branch flow control unit while the processing gas supply unit supplies the processing gas. After the inner pressures of the first and the second processing gas branch line become stable, the control unit switches the pressure ratio control to a fixed pressure control, and then the additional gas supply unit supplies the additional gas.
Public/Granted literature
- US20090145484A1 GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD Public/Granted day:2009-06-11
Information query
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