Invention Grant
US08236118B2 Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
有权
用于异质外延生长石墨烯的脱粘和转移技术,以及包括其的产物
- Patent Title: Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
- Patent Title (中): 用于异质外延生长石墨烯的脱粘和转移技术,以及包括其的产物
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Application No.: US12461347Application Date: 2009-08-07
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Publication No.: US08236118B2Publication Date: 2012-08-07
- Inventor: Vijayen S. Veerasamy
- Applicant: Vijayen S. Veerasamy
- Applicant Address: US MI Auburn Hills
- Assignee: Guardian Industries Corp.
- Current Assignee: Guardian Industries Corp.
- Current Assignee Address: US MI Auburn Hills
- Agency: Nixon & Vanderhye P.C.
- Main IPC: C23C28/00
- IPC: C23C28/00

Abstract:
Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).
Public/Granted literature
- US20110030879A1 Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same Public/Granted day:2011-02-10
Information query
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