Invention Grant
US08236105B2 Apparatus for controlling gas flow in a semiconductor substrate processing chamber
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用于控制半导体衬底处理室中的气体流动的装置
- Patent Title: Apparatus for controlling gas flow in a semiconductor substrate processing chamber
- Patent Title (中): 用于控制半导体衬底处理室中的气体流动的装置
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Application No.: US10821310Application Date: 2004-04-08
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Publication No.: US08236105B2Publication Date: 2012-08-07
- Inventor: Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
- Applicant: Kallol Bera , Heeyeop Chae , Hamid Tavassoli , Yan Ye
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/52 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
Abstract:
Apparatus for controlling the flow of a gas between a process region and an exhaust port in a semiconductor substrate processing chamber is provided. The apparatus includes at least one restrictor plate supported within the semiconductor processing chamber and at least partially circumscribing a substrate support pedestal. The restrictor plate is adapted to control the flow of at least one gas flowing between the process region and the exhaust port.
Public/Granted literature
- US20050224180A1 Apparatus for controlling gas flow in a semiconductor substrate processing chamber Public/Granted day:2005-10-13
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