Invention Grant
- Patent Title: Methods of fabricating microelectronic devices
- Patent Title (中): 制造微电子器件的方法
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Application No.: US12888911Application Date: 2010-09-23
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Publication No.: US08234782B2Publication Date: 2012-08-07
- Inventor: Sanh D. Tang
- Applicant: Sanh D. Tang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H05K3/10
- IPC: H05K3/10 ; H01L21/4763

Abstract:
Methods of fabricating components for microelectronic devices, microelectronic devices including memory cells or other components, and computers including memory devices include forming memory cells. For example, one embodiment is directed toward a method of fabricating a memory cell on a workpiece having a substrate, a plurality of active areas in the substrate, and a dielectric layer over the active areas. One embodiment of the method includes constructing bit line contact openings in the dielectric layer over first portions of the active areas and cell plug openings over second portions of the active areas. The method also includes depositing a first conductive material into the bit line contact openings to form bit line contacts and into the cell plug openings to form cell plugs. A conductive line is formed in a trench in the substrate.
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