Invention Grant
US08234774B2 Method for fabricating a microelectromechanical system (MEMS) resonator
有权
用于制造微机电系统(MEMS)谐振器的方法
- Patent Title: Method for fabricating a microelectromechanical system (MEMS) resonator
- Patent Title (中): 用于制造微机电系统(MEMS)谐振器的方法
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Application No.: US11963709Application Date: 2007-12-21
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Publication No.: US08234774B2Publication Date: 2012-08-07
- Inventor: Paul Merritt Hagelin , Charles Grosjean
- Applicant: Paul Merritt Hagelin , Charles Grosjean
- Applicant Address: US CA Sunnyvale
- Assignee: SiTime Corporation
- Current Assignee: SiTime Corporation
- Current Assignee Address: US CA Sunnyvale
- Agent Neil A. Steinberg
- Main IPC: H04R31/00
- IPC: H04R31/00

Abstract:
One embodiment of the present invention sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with oxide. By growing oxide within the slots, the amount of oxide growth on the outside surfaces of the MEMS resonator may be reduced. Furthermore, by situating the slots in the areas of large flexural stresses, the contribution of the embedded oxide to the overall TCF of the MEMS resonator is increased, and the total amount of oxide needed to decrease the overall TCF of the MEMS resonator to a particular target value is reduced. As a result, the TCF of the MEMS resonator may be reduced in a manner that is more effective relative to prior art approaches.
Public/Granted literature
- US20090158566A1 Temperature Stable MEMS Resonator Public/Granted day:2009-06-25
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