Invention Grant
US08196218B2 System and methods for controlling properties of nanojunction devices
失效
用于控制纳米结器件性能的系统和方法
- Patent Title: System and methods for controlling properties of nanojunction devices
- Patent Title (中): 用于控制纳米结器件性能的系统和方法
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Application No.: US12414069Application Date: 2009-03-30
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Publication No.: US08196218B2Publication Date: 2012-06-05
- Inventor: Bingqian Xu , Fan Chen
- Applicant: Bingqian Xu , Fan Chen
- Applicant Address: US GA Athens
- Assignee: University of Georgia Research Foundation, Inc.
- Current Assignee: University of Georgia Research Foundation, Inc.
- Current Assignee Address: US GA Athens
- Agency: Pabst Patent Group LLP
- Main IPC: G01Q60/40
- IPC: G01Q60/40

Abstract:
An exemplary, highly integrated, SPM-based system for measuring the conductivity and/or force of substance under programmable engaging/stretching processes is described. A sample bias is applied across two electrodes. A substance to be measured is sandwiched between them. A first electrode is first brought relative to a second electrode (engaging) in programmable pathways that can be described as stretching distance versus time curves. The process of engaging the electrodes continues until a certain current reached, a certain force reached and whichever case happens first. The electrodes are then separated (stretching) in programmable pathways that can be described as stretching distance versus time curves. A periodic modulation can be applied to the engaging/stretching process to realize different stretch pathways. The sample bias across the electrodes is kept constant or swept in a programmable shape over time, described as a voltage-versus time curve. The conductivity, engaging/stretching distance, and/or force are measured simultaneously.
Public/Granted literature
- US20090249522A1 SYSTEM AND METHODS FOR CONTROLLING PROPERTIES OF NANOJUNCTION DEVICES Public/Granted day:2009-10-01
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