Invention Grant
US08196088B2 Method and structure for screening NFET-to-PFET device performance offsets within a CMOS process
有权
在CMOS工艺中屏蔽NFET至PFET器件性能偏移的方法和结构
- Patent Title: Method and structure for screening NFET-to-PFET device performance offsets within a CMOS process
- Patent Title (中): 在CMOS工艺中屏蔽NFET至PFET器件性能偏移的方法和结构
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Application No.: US11949066Application Date: 2007-12-03
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Publication No.: US08196088B2Publication Date: 2012-06-05
- Inventor: Jeffrey H. Oppold
- Applicant: Jeffrey H. Oppold
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Downs Rachlin Martin PLLC
- Main IPC: G06F11/22
- IPC: G06F11/22 ; G06F17/50

Abstract:
A method of screening on-chip variation in NFET-to-PFET device performance for as-manufactured integrated circuits (ICs) made using a CMOS process. The method includes defining an acceptable frequency- or period-based NFET-to-PFET device performance envelope by simulating a pair of ring oscillators, one of which contains only NFET transistors and the other of which contains only PFET transistors. The ring oscillators are then fabricated into each as-manufactured ICs. At screening time, the ring oscillators in each fabricated IC are tested to measure their frequencies (periods). These frequencies (periods) are then compared to the performance envelope to determine whether the NFET-to-PFET device performance of the corresponding IC is acceptable or not.
Public/Granted literature
- US20090144024A1 Method and Structure for Screening NFET-to-PFET Device Performance Offsets Within a CMOS Process Public/Granted day:2009-06-04
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