Invention Grant
- Patent Title: Error detection and correction circuit and semiconductor memory
- Patent Title (中): 误差检测和校正电路和半导体存储器
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Application No.: US12279177Application Date: 2006-02-15
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Publication No.: US08196011B2Publication Date: 2012-06-05
- Inventor: Morishi Izumita , Hiroshi Takayanagi
- Applicant: Morishi Izumita , Hiroshi Takayanagi
- Applicant Address: JP Tokyo
- Assignee: Hitachi ULSI Systems Co., Ltd.
- Current Assignee: Hitachi ULSI Systems Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- International Application: PCT/JP2006/302616 WO 20060215
- International Announcement: WO2007/094055 WO 20070823
- Main IPC: G06F3/00
- IPC: G06F3/00

Abstract:
Input data (1A) having an integral multiple of 8 bits is divided into symbols in units of b bits (b is an integer of 5 to 7) in a register file 10, an error detecting code is added in an error detection calculation circuit 20, and then encoding (such as Reed Solomon (RS) encoding) having an error correction capability of two or more symbols is performed in a parity calculation circuit 30 to record the data in a storage 40. In the reproduction, error correction in units of symbols is performed to reproduced data from the storage 40 in an error correction circuit 70, error detection processing is performed in an error detection calculation circuit 80, and then data having the integral multiple of 8 bits is recovered in a register file 90 to output the same. By this means, it is possible to provide a storage system with high reliability to a soft error that occurs in a storage such as semiconductor memory.
Public/Granted literature
- US20080320368A1 Error Detection and Correction Circuit and Semiconductor Memory Public/Granted day:2008-12-25
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