Invention Grant
- Patent Title: Bi-directional multi-drop bus memory system
- Patent Title (中): 双向多点总线存储器系统
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Application No.: US12477545Application Date: 2009-06-03
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Publication No.: US08195855B2Publication Date: 2012-06-05
- Inventor: Deog-Kyoon Jeong , Suhwan Kim , Woo-Yeol Shin , Dong-Hyuk Lim , Ic-Su Oh
- Applicant: Deog-Kyoon Jeong , Suhwan Kim , Woo-Yeol Shin , Dong-Hyuk Lim , Ic-Su Oh
- Applicant Address: KR Gyeonggi-do KR Seoul
- Assignee: Hynix Semiconductor Inc.,Seoul National University Industry Foundation
- Current Assignee: Hynix Semiconductor Inc.,Seoul National University Industry Foundation
- Current Assignee Address: KR Gyeonggi-do KR Seoul
- Agency: IP & T Group LLP
- Priority: KR10-2008-0055220 20080612
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G05F3/16 ; H03K17/16

Abstract:
A bus system includes a plurality of stubs; a plurality of connectors, each of which is serially coupled between a corresponding one of the stubs and a corresponding one of memory modules; a plurality of first serial loads, each of which is serially coupled to a corresponding one of the connectors; and a plurality of second serial loads, each of which is serially coupled to characteristic impedance of a transmission line of a corresponding one of the stubs, wherein the first and the second serial loads are determined to be impedance matched at each transmission line terminal of the stubs.
Public/Granted literature
- US20090313410A1 BI-DIRECTIONAL MULTI-DROP BUS MEMORY SYSTEM Public/Granted day:2009-12-17
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