Invention Grant
US08194482B2 Test circuit, semiconductor memory apparatus using the same, and test method of the semiconductor memory apparatus
有权
测试电路，使用其的半导体存储器件以及半导体存储器件的测试方法
- Patent Title: Test circuit, semiconductor memory apparatus using the same, and test method of the semiconductor memory apparatus
- Patent Title (中): 测试电路，使用其的半导体存储器件以及半导体存储器件的测试方法
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Application No.: US12650727Application Date: 2009-12-31
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Publication No.: US08194482B2Publication Date: 2012-06-05
- Inventor: Yong Gu Kang
- Applicant: Yong Gu Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0093611 20090930
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A test circuit of a semiconductor memory apparatus includes: a test control signal generating unit configured to enable a control signal if an active signal is enabled after a test signal is enabled, and substantially maintain the control signal in an enable state until a precharge timing signal is enabled; and a precharge control unit configured to invert the control signal to output the inverted signal as a bit line precharge signal when a preliminary bit line precharge signal is in a disable state.
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