Invention Grant
US08194479B2 Semiconductor memory device having a skew signal generator for adjusting a delay interval of internal circuitry
失效
具有用于调整内部电路的延迟间隔的偏斜信号发生器的半导体存储器件
- Patent Title: Semiconductor memory device having a skew signal generator for adjusting a delay interval of internal circuitry
- Patent Title (中): 具有用于调整内部电路的延迟间隔的偏斜信号发生器的半导体存储器件
-
Application No.: US12150403Application Date: 2008-04-28
-
Publication No.: US08194479B2Publication Date: 2012-06-05
- Inventor: Kyoung Youn Lee , Ho Uk Song
- Applicant: Kyoung Youn Lee , Ho Uk Song
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2007-0141052 20071228
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A skew signal generator is provided which comprises a fuse signal generating unit for generating a plurality of fuse signals, and an encoder for generating skew signals including skew information of a wafer by encoding the fuse signals.
Public/Granted literature
- US20090167415A1 Skew signal generator and semiconductor memory device Public/Granted day:2009-07-02
Information query
