Invention Grant
US08194469B2 Optical sensor element, imaging device, electronic equipment and memory element
有权
光学传感器元件，成像设备，电子设备和存储元件
- Patent Title: Optical sensor element, imaging device, electronic equipment and memory element
- Patent Title (中): 光学传感器元件，成像设备，电子设备和存储元件
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Application No.: US12361049Application Date: 2009-01-28
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Publication No.: US08194469B2Publication Date: 2012-06-05
- Inventor: Tsutomu Tanaka , Dharam Pal Gosain
- Applicant: Tsutomu Tanaka , Dharam Pal Gosain
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2008-020558 20080131
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.
Public/Granted literature
- US20100097838A1 OPTICAL SENSOR ELEMENT, IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MEMORY ELEMENT Public/Granted day:2010-04-22
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