A three dimensional stacked nonvolatile semiconductor memory according to examples of the present invention includes a memory cell array comprised of first and second blocks disposed side by side and a driver disposed between the first and second blocks. At least two conductive layers having the same structure as that of the at least two conductive layers in the first and second blocks are disposed on the driver, and select gate lines in the first and second blocks are connected to the driver through the at least two conductive layers on the driver.