Invention Grant
US08194452B2 Nonvolatile memory systems with embedded fast read and write memories
有权
具有嵌入式快速读写存储器的非易失性存储器系统
- Patent Title: Nonvolatile memory systems with embedded fast read and write memories
- Patent Title (中): 具有嵌入式快速读写存储器的非易失性存储器系统
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Application No.: US12915177Application Date: 2010-10-29
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Publication No.: US08194452B2Publication Date: 2012-06-05
- Inventor: G. R. Mohan Rao
- Applicant: G. R. Mohan Rao
- Agency: Eugene M. Cummings, P.C.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G06F9/26
Abstract:
A nonvolatile memory system is described with novel architecture coupling nonvolatile storage memory with random access volatile memory. New commands are included to enhance the read and write performance of the memory system.
Public/Granted literature
- US20110060870A1 NONVOLATILE MEMORY SYSTEMS WITH EMBEDDED FAST READ AND WRITE MEMORIES Public/Granted day:2011-03-10
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