Invention Grant
US08194451B2 Memory cells, memory cell arrays, methods of using and methods of making
有权
存储单元，存储单元阵列，使用方法和制作方法
- Patent Title: Memory cells, memory cell arrays, methods of using and methods of making
- Patent Title (中): 存储单元，存储单元阵列，使用方法和制作方法
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Application No.: US12552903Application Date: 2009-09-02
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Publication No.: US08194451B2Publication Date: 2012-06-05
- Inventor: Yuniarto Widjaja
- Applicant: Yuniarto Widjaja
- Applicant Address: US CA San Jose
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA San Jose
- Agent Alan W. Cannon
- Main IPC: G11C14/00
- IPC: G11C14/00
Abstract:
A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type, the second region being formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; a gate positioned between the first and second regions and above the top surface; and a nonvolatile memory configured to store data upon transfer from the body region.
Public/Granted literature
- US20090316492A1 MEMORY CELLS, MEMORY CELL ARRAYS, METHODS OF USING AND METHODS OF MAKING Public/Granted day:2009-12-24
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