Invention Grant
US08194446B2 Methods for programming a memory device and memory devices using inhibit voltages that are less than a supply voltage
有权
使用小于电源电压的禁止电压对存储器件和存储器件进行编程的方法
- Patent Title: Methods for programming a memory device and memory devices using inhibit voltages that are less than a supply voltage
- Patent Title (中): 使用小于电源电压的禁止电压对存储器件和存储器件进行编程的方法
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Application No.: US13051380Application Date: 2011-03-18
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Publication No.: US08194446B2Publication Date: 2012-06-05
- Inventor: Shigekazu Yamada
- Applicant: Shigekazu Yamada
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/00
- IPC: G11C16/00
Abstract:
Methods for programming a memory array and memory devices are disclosed. In one such method, inhibited bit lines are charged to an inhibit voltage that is less than a supply voltage. The word lines of memory cells to be programmed are biased at a programming preparation voltage that is less than a nominal programming preparation voltage as used in the conventional art. Programming pulses can be applied to selected word lines of the memory cells to be programmed when the uninhibited bit lines are at 0V.
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