Invention Grant
- Patent Title: Semiconductor storage device comprising dot-type charge accumulation portion and control gate, and method of manufacturing the same
- Patent Title (中): 包括点式电荷累积部和控制栅的半导体存储装置及其制造方法
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Application No.: US12727780Application Date: 2010-03-19
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Publication No.: US08194445B2Publication Date: 2012-06-05
- Inventor: Kenji Sawamura
- Applicant: Kenji Sawamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-219737 20090924
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L29/788 ; H01L29/792 ; H01L21/336
Abstract:
A semiconductor memory device includes a first insulation film, Charge accumulation portions, a second insulation film, and a control gate. The first insulation film is located on an active area (AA). The charge accumulation portions comprise minute crystals arranged on the first insulation film. A density of the charge accumulation portions at an end portion in an AA width direction of the first insulation film is higher than a density of the charge accumulation portions at a central potion in the AA width direction. The second insulation film is located on the first insulation film so as to coat the charge accumulation portions. The control gate is located on the second insulation film.
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