Invention Grant
US08194440B2 Phase change memory device having multiple reset signals and operating method thereof
有权
具有多个复位信号的相变存储器件及其操作方法
- Patent Title: Phase change memory device having multiple reset signals and operating method thereof
- Patent Title (中): 具有多个复位信号的相变存储器件及其操作方法
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Application No.: US12133725Application Date: 2008-06-05
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Publication No.: US08194440B2Publication Date: 2012-06-05
- Inventor: Hee Bok Kang , Suk Kyoung Hong
- Applicant: Hee Bok Kang , Suk Kyoung Hong
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0080664 20070810
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change memory device includes a cell array unit having a phase change resistance cell positioned at an intersection of a word line and a bit line. A write driving unit is configured to generate a single write voltage to the cell array unit when data to be written is a first data and is configured to generate a plurality of write voltages selectively when the data is a second data.
Public/Granted literature
- US20090040811A1 PHASE CHANGE MEMORY DEVICE HAVING MULTIPLE RESET SIGNALS AND OPERATING METHOD THEREOF Public/Granted day:2009-02-12
Information query
