A magnetic random access memory includes: a first ferromagnetic layer; an insulating layer provided adjacent to the first ferromagnetic layer; and a first magnetization pinned layer provided adjacent to the insulating layer on a side opposite to the first ferromagnetic layer. The first ferromagnetic layer includes a magnetization free region, a first magnetization pinned region, and a second magnetization pinned region. The magnetization free region has reversible magnetization, and overlaps with the second ferromagnetic layer. The first magnetization pinned region has first pinned magnetization, and is connected to a part of the magnetization free region. The second magnetization pinned region has second pinned magnetization, and is connected to a part of the magnetization free region. The first ferromagnetic layer has magnetic anisotropy in a direction perpendicular to a film surface. The first pinned magnetization and the second pinned magnetization are pinned antiparallel to each other in the direction perpendicular to the film surface.