Invention Grant
- Patent Title: Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device
- Patent Title (中): 使用磁畴壁移动的信息存储装置和制造信息存储装置的方法
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Application No.: US11980425Application Date: 2007-10-31
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Publication No.: US08194430B2Publication Date: 2012-06-05
- Inventor: Chee-kheng Lim
- Applicant: Chee-kheng Lim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0133096 20061222
- Main IPC: G11B5/66
- IPC: G11B5/66
Abstract:
An information storage device includes a magnetic layer and a supply unit. The magnetic layer includes a plurality of regions, a first region having a first magnetic anisotropic energy and a second region having a second magnetic anisotropic energy. The first and second regions are arranged alternately, and the second region is doped with impurity ions. The second magnetic anisotropic energy is less than the first magnetic anisotropic energy. The supply unit applies energy to the magnetic layer for moving magnetic domain walls within the magnetic layer.
Public/Granted literature
Information query
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