An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a first rail, a second rail, a first transistor and a resistance unit. The drain of the first transistor is electrically coupled to the first rail, and the source and gate of the first transistor are electrically coupled to the second rail. The resistance unit is electrically coupled between a body of the first transistor and the second rail. When ESD occurs, the resistance unit provides a resistance between the body of the first transistor and the second rail. An ESD protection device is also provided.