Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12289904Application Date: 2008-11-06
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Publication No.: US08194369B2Publication Date: 2012-06-05
- Inventor: Mototsugu Okushima
- Applicant: Mototsugu Okushima
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-293233 20071112
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A semiconductor integrated circuit includes: an output pad from which an output signal is outputted; an output signal line connected with the output pad; a first pad configured to function as a ground terminal or a power supply terminal; a first wiring connected with the first pad; an output driver connected with the output pad and configured to generate the output signal; an ESD protection device connected with the output signal line and having a function to discharge surge applied to the output pad; and a first trigger MOS transistor used as a trigger device. The output driver includes: a first protection target device connected between the output signal line and the first interconnection; and a first resistance element connected between the first protection target device and the first interconnection. The first trigger MOS transistor configured to detect a voltage generated in the first resistance element by a gate of the first trigger MOS transistor and to allow the ESD protection device operate in response to the detected voltage.
Public/Granted literature
- US20090122452A1 Semiconductor integrated circuit Public/Granted day:2009-05-14
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