Invention Grant
- Patent Title: Magnetoresistive effect element in CPP-type structure including ferromagnetic layer configured with CoFe system alloy and magnetic disk device therewith
- Patent Title (中): CPP型结构中的磁阻效应元件，包括配置有CoFe系合金的铁磁层及其磁盘装置
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Application No.: US12461972Application Date: 2009-08-31
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Publication No.: US08194364B2Publication Date: 2012-06-05
- Inventor: Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
- Applicant: Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio.
Public/Granted literature
- US20110051295A1 Magnetoresistive effect element in CPP-type structure and magnetic disk device Public/Granted day:2011-03-03
Information query
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