Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11711730Application Date: 2007-02-28
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Publication No.: US08193879B2Publication Date: 2012-06-05
- Inventor: Shigekiyo Akutsu
- Applicant: Shigekiyo Akutsu
- Applicant Address: JP
- Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee Address: JP
- Agency: Studebaker & Brackett PC
- Agent Donald R. Studebaker
- Priority: JP2006-160049 20060608
- Main IPC: H01L21/822
- IPC: H01L21/822 ; H04B1/10

Abstract:
At least one capacitor cell for absorbing noise on a power supply voltage and a ground potential are arranged between at least one logic cell which configures a semiconductor integrated circuit and a power supply main line for supplying a power supply voltage to the logic cell. The power supply voltage where noises are suppressed by the capacitor cells is supplied to the logic cell, thus improving performance of the semiconductor integrated circuit. In addition, a distribution density of the capacitor cell or a capacity of the capacitor cell increases as the capacitor cell is separated from the power supply main line. A predetermined power supply voltage is supply to the logic cell which is separated from the power supply main line, so that a decrease in operation speed of the semiconductor integrated circuit can be suppressed.
Public/Granted literature
- US20070286316A1 Semiconductor integrated circuit device Public/Granted day:2007-12-13
Information query
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