Invention Grant
US08193851B2 Fuse circuit of semiconductor device and method for monitoring fuse state thereof
失效
半导体装置的保险丝电路及其熔断状态的监视方法
- Patent Title: Fuse circuit of semiconductor device and method for monitoring fuse state thereof
- Patent Title (中): 半导体装置的保险丝电路及其熔断状态的监视方法
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Application No.: US12494520Application Date: 2009-06-30
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Publication No.: US08193851B2Publication Date: 2012-06-05
- Inventor: Seung-Lo Kim
- Applicant: Seung-Lo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0043554 20090519
- Main IPC: H01H37/76
- IPC: H01H37/76 ; H01H85/00
Abstract:
A fuse circuit of a semiconductor device includes a plurality of fuse set units configured to compare an input address with address information programmed according to a fuse cutting state and a test control unit configured to enable one or more fuse set units selected based on a number of times that a selection signal is enabled in a test mode.
Public/Granted literature
- US20100295605A1 FUSE CIRCUIT OF SEMICONDUCTOR DEVICE AND METHOD FOR MONITORING FUSE STATE THEREOF Public/Granted day:2010-11-25
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