Invention Grant
- Patent Title: Driving circuit for depletion mode semiconductor switches
- Patent Title (中): 耗尽型半导体开关的驱动电路
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Application No.: US13081744Application Date: 2011-04-07
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Publication No.: US08193786B2Publication Date: 2012-06-05
- Inventor: Maurizio Salato , Marco Soldano
- Applicant: Maurizio Salato , Marco Soldano
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: G05F1/618
- IPC: G05F1/618 ; G05F3/16

Abstract:
A driving circuit for a half bridge utilizing bidirectional semiconductor switches in accordance with an embodiment of the present application includes a high side driver operable to control a high side bidirectional semiconductor switch, wherein the high side driver provides a negative bias voltage to the bidirectional semiconductor switch to turn the high side bidirectional semiconductor switch OFF. A low side driver may be operable to control a low side bidirectional semiconductor switch. An external voltage source with a negative terminal of the voltage source connected to the high side driver may be provided. A high side driving switch may be positioned between the negative terminal of the voltage source and the high side driver and operable to connect the high side driver to the negative terminal of the voltage source when the low side driver turns the low side bidirectional semiconductor switch ON.
Public/Granted literature
- US20110181252A1 Driving Circuit for Depletion Mode Semiconductor Switches Public/Granted day:2011-07-28
Information query
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