Invention Grant
- Patent Title: Perovskite oxide thin film EL element
- Patent Title (中): 钙钛矿氧化物薄膜EL元件
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Application No.: US12735793Application Date: 2009-02-17
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Publication No.: US08193704B2Publication Date: 2012-06-05
- Inventor: Hiroshi Takashima , Yoshiyuki Inaguma , Noboru Miura , Kazushige Ueda , Mitsuru Itoh
- Applicant: Hiroshi Takashima , Yoshiyuki Inaguma , Noboru Miura , Kazushige Ueda , Mitsuru Itoh
- Applicant Address: JP Tokyo
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: JP2008-037038 20080219
- International Application: PCT/JP2009/052680 WO 20090217
- International Announcement: WO2009/104595 WO 20090827
- Main IPC: H01J1/62
- IPC: H01J1/62

Abstract:
There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrode 1 comprising a polished single crystal substrate, an electron transport layer 2 comprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode 1, a light-emitting layer 3 comprising a perovskite oxide thin film formed on the electron transport layer 2, a hole transport layer 4 comprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer 3, a buffer layer 5 formed on the hole transport layer 4, and a transparent upper electrode 6 formed on the buffer layer 5.
Public/Granted literature
- US20110121722A1 PEROVSKITE OXIDE THIN FILM EL ELEMENT Public/Granted day:2011-05-26
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