Invention Grant
US08193648B2 Method for detecting errors of exposed positions of a pre-layer and a current layer by an integrated alignment and overlay mark
有权
用于通过集成对准和重叠标记来检测预层和当前层的暴露位置的错误的方法
- Patent Title: Method for detecting errors of exposed positions of a pre-layer and a current layer by an integrated alignment and overlay mark
- Patent Title (中): 用于通过集成对准和重叠标记来检测预层和当前层的暴露位置的错误的方法
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Application No.: US12758289Application Date: 2010-04-12
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Publication No.: US08193648B2Publication Date: 2012-06-05
- Inventor: Yuan Ku Lan , Chung-Yuan Lee
- Applicant: Yuan Ku Lan , Chung-Yuan Lee
- Applicant Address: TW Taoyuan County
- Assignee: Inotera Memories, Inc.
- Current Assignee: Inotera Memories, Inc.
- Current Assignee Address: TW Taoyuan County
- Agency: Rosenberg, Klein & Lee
- Priority: TW98145824A 20091230
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/66
Abstract:
An integrated alignment and overlay mark for detecting the exposed errors of the photolithography process between a pre-layer and a current layer is disclosed. The integrated alignment and overlay mark includes an alignment mark and an overlay mark in the same shot region. The alignment mark is formed surrounding the overlay mark; therefore, the gap or the orientation between the pre-layer and the current layer can be calculated in order to check the alignment accuracy of photolithography process.
Public/Granted literature
- US20110156285A1 INTEGRATED ALIGNMENT AND OVERLAY MARK, AND METHOD FOR DETECTING ERRORS OF EXPOSED POSITIONS THEREOF Public/Granted day:2011-06-30
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