Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12164464Application Date: 2008-06-30
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Publication No.: US08193631B2Publication Date: 2012-06-05
- Inventor: Kimitoshi Sato , Mika Okumura , Yasuo Yamaguchi , Makio Horikawa
- Applicant: Kimitoshi Sato , Mika Okumura , Yasuo Yamaguchi , Makio Horikawa
- Applicant Address: JP
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP
- Agency: Studebaker & Brackett PC
- Agent Donald R. Studebaker; John F. Guay
- Priority: JP2007-339298 20071228
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.
Public/Granted literature
- US20090166623A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2009-07-02
Information query
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