Invention Grant
- Patent Title: Semiconductor die having increased usable area
- Patent Title (中): 半导体管芯具有增加的可用面积
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Application No.: US11715241Application Date: 2007-03-06
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Publication No.: US08193613B2Publication Date: 2012-06-05
- Inventor: Ken Jian Ming Wang , Ming Wang Sze
- Applicant: Ken Jian Ming Wang , Ming Wang Sze
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
According to one embodiment, a semiconductor die having increased usable area has at least six sides. The semiconductor die has a reduced stress at each corner of the die, resulting in smaller keep out zones near the corners of the semiconductor die, which allow the placement of bond pads near each corner of the die. The semiconductor die further allows the placement of active circuitry near each corner of the semiconductor die. One embodiment results in a 5.0% increase in usable area on the semiconductor die.
Public/Granted literature
- US20080220220A1 Semiconductor die having increased usable area Public/Granted day:2008-09-11
Information query
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