Invention Grant
- Patent Title: Heterojunction bipolar transistor device with electrostatic discharge ruggedness
- Patent Title (中): 异质结双极晶体管器件具有静电放电坚固性
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Application No.: US12121719Application Date: 2008-05-15
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Publication No.: US08193609B2Publication Date: 2012-06-05
- Inventor: Timothy Henderson , Jeremy Middleton , John Hitt
- Applicant: Timothy Henderson , Jeremy Middleton , John Hitt
- Applicant Address: US OR Hillsboro
- Assignee: TriQuint Semiconductor, Inc.
- Current Assignee: TriQuint Semiconductor, Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Schwabe Williamson & Wyatt
- Main IPC: H01L29/737
- IPC: H01L29/737
Abstract:
A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.
Public/Granted literature
- US20090283802A1 HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE WITH ELECTROSTATIC DISCHARGE RUGGEDNESS Public/Granted day:2009-11-19
Information query
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