Invention Grant
- Patent Title: Shared-pixel-type image sensor and method of fabricating the same
- Patent Title (中): 共享像素型图像传感器及其制造方法
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Application No.: US12416703Application Date: 2009-04-01
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Publication No.: US08193600B2Publication Date: 2012-06-05
- Inventor: Hyun-Pil Noh , Duck-Hyung Lee , Doo-Cheol Park
- Applicant: Hyun-Pil Noh , Duck-Hyung Lee , Doo-Cheol Park
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0036375 20080418
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A shared-pixel-type image sensor including a shared floating diffusion region formed in a semiconductor substrate; first and second adjacent photoelectric conversion regions sharing the floating diffusion region; two transmission elements that alternately transfer electric charges accumulated in the first and second photoelectric conversion regions to the shared floating diffusion region, respectively; a drive element for outputting the electric charges of the shared floating diffusion region; a first contact formed on the floating diffusion region; a second contact formed on the drive element; and a local wire that connects the first and second contacts to electrically connect the floating diffusion region and the drive element, wherein the local wire is formed at a level lower than respective top surfaces of the first and second contacts.
Public/Granted literature
- US20090261443A1 SHARED-PIXEL-TYPE IMAGE SENSOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-10-22
Information query
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