Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13087072Application Date: 2011-04-14
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Publication No.: US08193588B2Publication Date: 2012-06-05
- Inventor: Su Ock Chung
- Applicant: Su Ock Chung
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0038345 20080424
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392
Abstract:
A method for fabricating a semiconductor device comprises: forming a gate pattern over a silicon active region and an insulating layer, which form a semiconductor substrate; removing the silicon active region exposed between the gate patterns; and filling a space between the gate patterns to form a plug.
Public/Granted literature
- US20110198697A1 Semiconductor Device Public/Granted day:2011-08-18
Information query
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