Invention Grant
- Patent Title: Enhancement mode gallium nitride power devices
- Patent Title (中): 增强型氮化镓功率器件
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Application No.: US13019150Application Date: 2011-02-01
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Publication No.: US08193562B2Publication Date: 2012-06-05
- Inventor: Chang Soo Suh , Umesh Mishra
- Applicant: Chang Soo Suh , Umesh Mishra
- Applicant Address: US CA Goleta
- Assignee: Tansphorm Inc.
- Current Assignee: Tansphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
Public/Granted literature
- US20110121314A1 ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES Public/Granted day:2011-05-26
Information query
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