Invention Grant
US08193532B2 Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
有权
薄膜集成电路器件，IC标签，包含薄膜集成电路的容器，薄膜集成电路器件的制造方法，容器的制造方法以及具有容器的产品的管理方法
- Patent Title: Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
- Patent Title (中): 薄膜集成电路器件，IC标签，包含薄膜集成电路的容器，薄膜集成电路器件的制造方法，容器的制造方法以及具有容器的产品的管理方法
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Application No.: US13115133Application Date: 2011-05-25
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Publication No.: US08193532B2Publication Date: 2012-06-05
- Inventor: Yasuyuki Arai , Akira Ishikawa , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yuko Tachimura
- Applicant: Yasuyuki Arai , Akira Ishikawa , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yuko Tachimura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-046456 20030224
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/66
Abstract:
The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.
Public/Granted literature
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