Invention Grant
- Patent Title: Nanoelectronic device
- Patent Title (中): 纳米电子器件
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Application No.: US12564091Application Date: 2009-09-22
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Publication No.: US08193524B2Publication Date: 2012-06-05
- Inventor: Mikael T Bjoerk , Joachim Knoch , Heike E Riel , Walter Heinrich Riess , Heinz Schmid
- Applicant: Mikael T Bjoerk , Joachim Knoch , Heike E Riel , Walter Heinrich Riess , Heinz Schmid
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Vazken Alexanian
- Priority: EP08105425 20080924
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/20
Abstract:
An electronic device and method of manufacturing the device. The device includes a semiconducting region, which can be a nanowire, a first contact electrically coupled to the semiconducting region, and at least one second contact capacitively coupled to the semiconducting region. At least a portion of the semiconducting region between the first contact and the second contact is covered with a dipole layer. The dipole layer can act as a local gate on the semiconducting region to enhance the electric properties of the device.
Public/Granted literature
- US20100072460A1 NANOELECTRONIC DEVICE Public/Granted day:2010-03-25
Information query
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