Invention Grant
- Patent Title: Compounds for depositing tellurium-containing films
- Patent Title (中): 用于沉积含碲膜的化合物
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Application No.: US12423382Application Date: 2009-04-14
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Publication No.: US08193388B2Publication Date: 2012-06-05
- Inventor: Benjamin J. Feist , Christian Dussarrat
- Applicant: Benjamin J. Feist , Christian Dussarrat
- Applicant Address: US CA Fremont
- Assignee: American Air Liquide, Inc.
- Current Assignee: American Air Liquide, Inc.
- Current Assignee Address: US CA Fremont
- Agent Patricia E. McQueeney
- Main IPC: C07C395/00
- IPC: C07C395/00 ; C07D293/00 ; H01L21/06
Abstract:
Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate.
Public/Granted literature
- US20090256127A1 Compounds for Depositing Tellurium-Containing Films Public/Granted day:2009-10-15
Information query
