Invention Grant
- Patent Title: Superconductor fabrication
- Patent Title (中): 超导体制造
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Application No.: US13173267Application Date: 2011-06-30
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Publication No.: US08193122B2Publication Date: 2012-06-05
- Inventor: David Anthony Cardwell , Nadendla Hari Babu , Yun-Hua Shi
- Applicant: David Anthony Cardwell , Nadendla Hari Babu , Yun-Hua Shi
- Applicant Address: US IL Chicago
- Assignee: The Boeing Company
- Current Assignee: The Boeing Company
- Current Assignee Address: US IL Chicago
- Agency: Nexsen Pruet, LLC
- Agent John B. Hardaway, III
- Priority: GB0428319.8 20041223
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A seed crystal for the fabrication of a superconductor is grown from a rare-earth oxide having the basic formula XwZtBaxCuyOz, X comprising at least one rare-earth element and Z being a dopant which raises the peritectic decomposition temperature (Tp) of the oxide. In a preferred embodiment, the dopant is Mg. Use of this rare-earth oxide material for seed crystals increases the temperature at which cold-seeding can be performed and thus enables the growth of a wider range of bulk superconductor materials by this process.
Public/Granted literature
- US20110319268A1 SUPERCONDUCTOR FABRICATION Public/Granted day:2011-12-29
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