Invention Grant
- Patent Title: Plasma processing apparatus and impedance adjustment method
- Patent Title (中): 等离子体处理装置和阻抗调整方法
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Application No.: US12466095Application Date: 2009-05-14
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Publication No.: US08193097B2Publication Date: 2012-06-05
- Inventor: Taichi Hirano
- Applicant: Taichi Hirano
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-165074 20040602
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A plasma processing apparatus, for performing a plasma processing on a substrate to be processed by generating a plasma of the processing gas in an evacuable processing chamber, includes an impedance adjusting mechanism. The impedance adjusting mechanism is provided with a resonance circuit formed to allow a radio frequency current to flow into the first electrode; a variable impedance unit installed on a power feed line to the first electrode; a detector for detecting an apparatus state to be used to search a resonance point of the resonance circuit; and a controller for searching a resonance point of the resonance circuit by detecting a signal of the apparatus state of the detector while varying a value of the variable impedance unit in a state where the plasma is formed and then adjusting the value of the variable impedance unit at the resonance point to a reference value.
Public/Granted literature
- US20090223926A1 PLASMA PROCESSING APPARATUS AND IMPEDANCE ADJUSTMENT METHOD Public/Granted day:2009-09-10
Information query
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