Invention Grant
- Patent Title: Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices
- Patent Title (中): 包括具有暴露端的贯穿衬底导电构件的半导体器件和制造这种半导体器件的方法
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Application No.: US11831247Application Date: 2007-07-31
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Publication No.: US08193092B2Publication Date: 2012-06-05
- Inventor: David S. Pratt
- Applicant: David S. Pratt
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
Semiconductor devices and methods of manufacturing semiconductor devices. One example of a method of fabricating a semiconductor device comprises forming a conductive feature extending through a semiconductor substrate such that the conductive feature has a first end and a second end opposite the first end, and wherein the second end projects outwardly from a surface of the substrate. The method can further include forming a dielectric layer over the surface of the substrate and the second end of the conductive feature such that the dielectric layer has an original thickness. The method can also include removing a portion of the dielectric layer to an intermediate depth less than the original thickness such that at least a portion of the second end of the conductive feature is exposed.
Public/Granted literature
- US20090032960A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2009-02-05
Information query
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