Invention Grant
US08193085B2 Method for fabricating flip-attached and underfilled semiconductor devices
有权
制造倒装和未充满电的半导体器件的方法
- Patent Title: Method for fabricating flip-attached and underfilled semiconductor devices
- Patent Title (中): 制造倒装和未充满电的半导体器件的方法
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Application No.: US12703267Application Date: 2010-02-10
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Publication No.: US08193085B2Publication Date: 2012-06-05
- Inventor: Masako Watanabe , Masazumi Amagai
- Applicant: Masako Watanabe , Masazumi Amagai
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Steven A. Shaw; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A semiconductor device (1700), which comprises a workpiece (1201) with an outline (1711) and a plurality of contact pads (1205) and further an external part (1701) with a plurality of terminal pads (1702). This part is spaced from the workpiece, and the terminal pads are aligned with the workpiece contact pads, respectively. A reflow element (1203) interconnects each of the contact pads with its respective terminal pad. Thermoplastic material (1204) fills the space between the workpiece and the part; this material adheres to the workpiece, the part and the reflow elements. Further, the material has an outline (1711) substantially in line with the outline of the workpiece, and fills the space (1707) substantially without voids. Due to the thermoplastic character of the filling material, the finished device can be reworked, when the temperature range for reflowing the reflow elements is reached.
Public/Granted literature
- US20100144098A1 Method for Fabricating Flip-Attached and Underfilled Semiconductor Devices Public/Granted day:2010-06-10
Information query
IPC分类: