Invention Grant
US08193061B2 Polysilicon control etch-back indicator 有权
多晶硅控制回蚀指示器

Polysilicon control etch-back indicator
Abstract:
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
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