Invention Grant
- Patent Title: Polysilicon control etch-back indicator
- Patent Title (中): 多晶硅控制回蚀指示器
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Application No.: US13066583Application Date: 2011-04-18
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Publication No.: US08193061B2Publication Date: 2012-06-05
- Inventor: Yu Wang , Tiesheng Li , Sung-Shan Tai , Hong Chang
- Applicant: Yu Wang , Tiesheng Li , Sung-Shan Tai , Hong Chang
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha & Omega Semiconductor Incorporated
- Current Assignee: Alpha & Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Bo-In Lin
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions.
Public/Granted literature
- US20110198588A1 Polysilicon control etch-back indicator Public/Granted day:2011-08-18
Information query
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