Invention Grant
US08193038B2 Method for manufacturing semiconductor device, semiconductor chip, and semiconductor wafer
有权
半导体器件,半导体芯片和半导体晶片的制造方法
- Patent Title: Method for manufacturing semiconductor device, semiconductor chip, and semiconductor wafer
- Patent Title (中): 半导体器件,半导体芯片和半导体晶片的制造方法
-
Application No.: US12801217Application Date: 2010-05-27
-
Publication No.: US08193038B2Publication Date: 2012-06-05
- Inventor: Shinichi Uchida , Yoshitsugu Kawashima , Hiroshi Ise
- Applicant: Shinichi Uchida , Yoshitsugu Kawashima , Hiroshi Ise
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-144645 20090617
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for manufacturing a semiconductor device includes forming a semiconductor wafer including a plurality of interconnect layers, the semiconductor wafer including: a plurality of chip-composing portions; a dicing region separating the chip-composing portions from each other; and a plurality of inter-chip interconnects formed in the dicing region and electrically connecting adjacent ones of the chip-composing portions; and forming semiconductor chips by dicing the dicing region so as to divide the chip-composing portions, wherein each of the inter-chip interconnects has a width of an intermediate portion narrower than widths of connection end portions connected to the adjacent ones of the chip-composing portions.
Public/Granted literature
- US20100320612A1 Method for manufacturing semiconductor device, semiconductor chip, and semiconductor wafer Public/Granted day:2010-12-23
Information query
IPC分类: