Invention Grant
- Patent Title: Manufacturing method for semiconductor devices and semiconductor device
- Patent Title (中): 半导体器件和半导体器件的制造方法
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Application No.: US12647444Application Date: 2009-12-26
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Publication No.: US08193024B2Publication Date: 2012-06-05
- Inventor: Atsushi Fujisawa
- Applicant: Atsushi Fujisawa
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2008-332637 20081226
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/44

Abstract:
The reliability of a photosensor-type semiconductor device is enhanced. The sealing step in a manufacturing process for the semiconductor device is carried out as described below. A molding die having an upper die and a lower die is prepared and a film is arranged between the upper die and the lower die. A lead frame in which first adhesive, a semiconductor chip, second adhesive 11, and a base material are mounted over the upper surface of each tab is arranged between the film and the lower die. The base material has an opening formed therein and the opening is covered with a protective sheet. The semiconductor chip has a light receiving area formed in its main surface. The upper die and the lower die are clamped to cause part of the base material to bite into the film. Thereafter, sealing resin is supplied to between the film and the lower die to form a blanket sealing body. Thus the photosensor-type semiconductor device without resin flash over the light receiving area is obtained.
Public/Granted literature
- US20100164082A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE Public/Granted day:2010-07-01
Information query
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